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Taiyo Nippon Sanso Corporation (“Nippon Sanso”) has been supplying an anhydrous hydrazine material called BRUTE.-Hydrazine manufactured by RASIRC, Inc.*1 (“RASIRC”) to the semiconductor industry. Nippon Sanso hereby announces that we will sell this product with even lower moisture content than that of the conventional product.

Taiyo Nippon Sanso Corporation (“Nippon Sanso”, President: Kenji Nagata) announces that it has installed its first Ga₂O₃ MOCVD system in the laboratory of Professor Yoshinao Kumagai at the Tokyo University of Agriculture and Technology. 

1. Background 

β-gallium oxide (β-Ga₂O₃) is attracting attention as a semiconductor material for next-generation power (and energy efficient) devices. In October 2020, Nippon Sanso and Tokyo University of Agriculture and Technology started joint research on β-Ga₂O₃ thin film growth by MOCVD method, and in March 2021, announced the successful MOCVD growth of β-Ga₂O₃. Nippon Sanso’s newly designed Ga₂O₃ MOCVD system will make it possible to fabricate complex device structures and further stimulate research and development of these materials. 

Nippon Sanso will continue to enhance its Ga2O3 MOCVD technology to enable better energy efficient semiconductor technology to promote its company mission and to support the realization of a carbon-neutral society. 

2. Outline of MOCVD system 

• Process Capability: 1 × 2-inch wafer 
• Model: FR2000-OX 
• Features: MOCVD growth chamber for high purity and high-speed growth of oxides on β-Ga2O3 substrates to meet the needs of thick film and alloy growth for research of high performance electronic devices. 

Taiyo Nippon Sanso Corporation (“Nippon Sanso”, President: Kenji Nagata) and RIKEN have demonstrated AlGaN (aluminum gallium nitride) deep ultraviolet LED electroluminescence (EL) at a short wavelength of 226 nm using Nippon Sanso’s MOCVD equipment.

AlGaN-based deep ultraviolet LEDs with emission wavelengths of 220 to 350 nm are applicable in a wide range of fields including sterilization, disinfection, and medicinal applications. Nippon Sanso and RIKEN have conducted joint research for epitaxial growth of and device efficiency improvement of the deep ultraviolet LED technology.

Previously, 280 nm emission wavelength was demonstrated with the Nippon Sanso SR4000HT MOCVD in 4-inch wafer configuration. Here we report EL emission with a short wavelength of 226 nm with the Nippon Sanso SR4000HT in 2-inch x 3 wafers configuration.

[Fig. 1] Graph showing the EL emission spectrum at each wavelength, shortening from 286 nm, and showing that the EL emission spectrum was obtained even at 226 nm.

[Fig. 2] Graph showing the relationship between AI composition and each wavelength, indicating that the emission wavelength changes linearly with respect to Al composition.

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