Taiyo Nippon Sanso is proud to sponsor and exhibit at the 14th International Conference on Nitride Semiconductors in Fukuoka, Japan, from November 12th-17th
Achievement of High-Speed Growth of High-Purity β-Gallium Oxide Films by Metalorganic Vapor Phase Epitaxy
This achievement is expected to lead to the practical application of mass production technology for β-Ga2O3 power devices for the realization of an energy-saving society in the future.