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Sandia National Laboratories Selects Second Taiyo Nippon Sanso SR4000HT MOCVD Platform for Ultra-Wide Bandgap Research and Development

Nippon Sanso announces Sandia National Laboratories (Sandia) selected Nippon Sanso’s SR-4000HT metal organic chemical vapor deposition (MOCVD) system for its expansion of aluminum gallium nitride (AlGaN) and aluminum nitride (AIN) power electronics and UV optoelectronics device development.

“Taiyo Nippon Sanso is very proud to announce Sandia’s second SR-4000HT system purchase. The SR- 4000HT’s advanced and stable performance for high temperature wide bandgap materials processing met the need for Sandia’s MOCVD capabilities. Taiyo Nippon Sanso is looking forward to supporting Sandia’s advanced technology development efforts for years to come,” said Nippon Sanso Executive Corporate Officer Kunihiro Kobayashi.

Nippon Sanso expects the ultra-wide bandgap power and optoelectronics go grow substantially, and for the SR- 4000HT MOCVD system to be the platform of choice for many AlGaN and AlN applications.

About Sandia National Laboratories

For more than 70 years, Sandia has delivered essential science and technology to resolve the nation’s most challenging security issues. Sandia National Laboratories is operated and managed by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc. National Technology and Engineering Solutions of Sandia operates Sandia National Laboratories as a contractor for the U.S. Department of Energy’s National Nuclear Security Administration (NNSA) and supports numerous federal, state, and local government agencies, companies, and organizations.

About Taiyo Nippon Sanso Corporation

Taiyo Nippon Sanso Corporation, founded in 1910 is a global supplier of industrial gases. In 1983, Nippon Sanso launched MOCVD operations alongside its conventional industrial gas operations. More information about Nippon Sanso MOCVD products and technology can be found at www.MOCVD.jp

Taiyo Nippon Sanso Corporation (“Nippon Sanso”) hereby announces that it has

achieved strategic alliance with 3D Printing Corporation K.K. (“3DPC”) in

Japan.

1. Overview on the Strategic Alliance

Nippon Sanso has been promoting and expanding 3D Printing business (Additive

Manufacturing “AM”). Nippon Sanso has launched differentiated products and

enhanced technical expertise thru partnership in the AM industry.

3DPC has founded in 2016 as an AM-related venture company in Japan and aim

to build a new 3D Printing based supply chain including into various products

to achieve its vision of revitalizing Japan manufacturing with 3D printing

manufacturing technologies.

The strategic alliance enables not only Nippon Sanso to introduce 3DPC’s products and

service into the broad network of Nippon Sanso but also to build business and technical

synergy with our metal 3D printer and gas solution system.

Note (*): DFAM

DFAM is a general term of design concept and tools for making the most

of AM technologies. e.g. optimization of design for light weighting parts

2. Overview of 3DPC

Name : 3D Printing Corporation K.K.

HQ and plant : LVP1-101,75-1, Onocho, Tsurumi,

Yokohama, Kanagawa, Japan

Establishment : 2016

Representative : Alexander De Vore

Taiyo Nippon Sanso Corporation

 Tokyo University of Agriculture and Technology

Gas-Phase Growth Ltd.

Taiyo Nippon Sanso Corporation

Accelerating the realization of a carbon-free society through next-generation power devices

 In collaboration with Dr. Hideaki Machida (President) and Dr. Masato Ishikawa of Gas-Phase Growth Ltd. and Mr. Kazutada Ikenaga of Taiyo Nippon Sanso Corporation (President: Kenji Nagata), Professor Yoshinao Kumagai and Assistant Professor Ken Goto of Division of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology (President: Kazuhiro Chiba), have revealed the chemical reaction mechanism of vapor phase growth of β-gallium oxide (β-Ga2O3) crystals (Note 1), which are attracting attention as materials for next-generation power devices with high energy-saving effects. The metalorganic vapor phase epitaxy (MOVPE) method (Note 2) was used to demonstrate the growth of high-purity β-Ga2O3 crystals under optimal growth conditions. These results hold promise to lead to the development of mass-production MOVPE equipment for β-Ga2O3 devices, and the practical application of β-Ga2O3 power devices for a decarbonization society. 

Please refer to the Japanese Journal of Applied Physics (abbreviated as JJAP) on March 29 for the results of this study. 

Title: Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy 

URL: https://doi.org/10.35848/1347-4065/abec9d 

(Note 1) β-gallium oxide (β-Ga2O3)

An oxide semiconductor crystal in which gallium (Ga) and oxygen (O) atoms are combined in a stoichiometric ratio of 2 : 3. Its band gap is about 4.5 eV, which is larger than that of Si (1.1 eV), 4H-SiC (3.3 eV) and GaN (3.4 eV).

(Note 2) Metalorganic Vapor Phase Epitaxy (MOVPE)

A method of crystal growth using organometallic compound gases as raw material. The film thickness can be controlled with a precision of one atomic layer, and it is widely used as a method for fabricating compound semiconductor devices that require nanometer-order* structure design. It is widely used in the fabrication of nitride semiconductor light-emitting devices and high-speed transistors, but has not been investigated in oxide crystal growth due to the high reactivity of oxygen with organometallic compounds.

* 1 nanometre is one billionth of a metre

◆Research-related inquiry

Tokyo University of Agriculture and Technology

Division of Applied Chemistry, Institute of Engineering

Professor Yoshinao Kumagai

E-mail:[email protected]

Gas-Phase Growth Ltd.

Hideaki Machida, President

E-mail:[email protected]

Taiyo Nippon Sanso Corporation

Compound Semiconductor EquipmentDept., Innovation Unit

Kazutada Ikenaga

E-mail:[email protected]