Taiyo Nippon Sanso will be presenting “Taiyo Nippon Sanso Compound Semiconductor Equipment Technology,” on Tuesday, August 12th, at the LEC 2025 Lester Eastman Conference on High Performance Devices at the University of Florida.
Taiyo Nippon Sanso will be presenting “Taiyo Nippon Sanso Epitaxy Solutions for Gallium Oxide,” on Tuesday, August 5th, at the 8th United States Gallium Oxide Workshop (GOX 2025) in Salt Lake City, Utah
Unipress Orders Multiple Taiyo Nippon Sanso SR4000HT MOCVD Platforms for Research and Development of Advanced Nitride Materials and Devices
Taiyo Nippon Sanso Corporation (Head Office: Shinagawa-ku, Tokyo; President: Kenji Nagata; hereinafter “Nippon Sanso”) and Institute of High Pressure Physics of the Polish Academy of Sciences (hereinafter “Unipress”) announce that Unipress will purchase and use multiple Nippon Sanso SR4000HT metal organic chemical vapor deposition (MOCVD) reactors for its advanced nitride research and development….
Osaka Metropolitan University in Collaboration with Tokyo University of Agriculture and Technology (TUAT) and Taiyo Nippon Sanso will be presenting on “Electrical Properties of Si-doped Ga2O3 Thin Films Grown by Low-Pressure Hot-Wall MOCVD and Effects of High-Temperature Annealing,” at the 67th Electronic Materials Conference in Durham, NC, on June 26, 2025
Jun J. Morihara,1,* Mao Bando,1 Junya Yoshinaga,2,3 Yoshinao Kumagai,2 and Masataka Higashiwaki1,4,*
1Department of Physics and Electronics, Osaka Metropolitan University, Sakai, Osaka 599-8531, Japan
2Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
3TAIYO NIPPON SANSO CORPORATION, Yokohama, Kanagawa 220-8561, Japan
4National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
Low-pressure hot-wall metalorganic chemical vapor deposition (MOCVD) can provide high-purity Ga2O3 homoepitaxial films even at a high growth rate of over 16 µm/h and thus is one of the most promising techniques for the future mass production of high-quality Ga2O3 epitaxial wafers [1]. In this work, we investigated electrical properties of Si-doped Ga2O3 thin films grown by the novel MOCVD technique and effects of post-growth high-temperature annealing on them…
